| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a one-transistor (1T) nonvolatile random access memory (NVRAM) cell that utilizes silicon carbide (SiC), enabling both the isolation of nonequilibrium charge, and fast and nondestructive charging/discharging. <P>SOLUTION: The diode is implemented as an NPN structure in SiC, separated by gate dielectric from the body of the MOSFET which can be manufactured from silicon, polysilicon or other semiconductors. The case of zero bias (FIG. 2b) shows that a PN junction (diode) adjacent to the gate dielectric creates a potential well that can store charges, in a manner similar to that in the potential well created by the floating gate. In the case of a positive voltage being applied to the control gate (FIG. 2c), the barrier is removed by the applied voltage, and thereby allowing fast and nondestructive removal of negative charges (or equivalently, deposition of positive charges). <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
