| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability in a semiconductor device including a thin film transistor using an oxide semiconductor layer, with low power consumption and having tolerance for electrostatic discharge. <P>SOLUTION: The semiconductor device includes a pixel part 1202 and a driver circuit part disposed on the same substrate, wherein a counter electrode layer having an aperture pattern is disposed in the driver circuit part, the counter electrode layer having the same potential as a counter electrode layer 1291 disposed opposing to a pixel electrode layer over a liquid crystal layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
