The method for fabricating non-volatile memory device having charge trap layer,申请号KR20080019961-传众专利搜索

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发明名称	The method for fabricating non-volatile memory device having charge trap layer
摘要
申请公布号	KR101033223(B1)	申请公布日期	2011.05.06
申请号	KR20080019961	申请日期	2008.03.04
申请人		发明人
分类号	H01L21/8247	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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