SUBSTRATE FOR EPITAXIAL GROWTH, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF MANUFACTURING THEM

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor epitaxial wafer suitable for production of a semiconductor device such as an HEMT, in which Si present in an interface between a substrate and an epitaxial film is effectively inactivated.

SOLUTION: In the semiconductor epitaxial wafer formed by epitaxially growing a semiconductor thin film on a semiconductor substrate, a ratio of sheet concentration DC/DSby a secondary ion mass spectrometry (SIMS) of carbon (C) and silicon (Si) present in the interface between the semiconductor substrate and the semiconductor thin film is 20 or higher. Furthermore, the sheet concentration DSof Si present in the interface between the semiconductor substrate and the semiconductor thin film is 2.3×1012cm-2or lower.

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