| 摘要 |
PROBLEM TO BE SOLVED: To provide an imaging device which can prevent deterioration of performance due to the diffusion of a substance contained in an electrode. SOLUTION: An imaging device 100 includes a substrate 1, a thin-film transistor 7 formed on the surface of the substrate 1, and a photoelectric conversion element 8, including a lower electrode 27 electrically connected with a drain electrode 25 of the thin-film transistor 7; a photoelectric conversion layer 30 prepared on the surface of the lower electrode 27; and a transparent electrode 34 prepared on the surface of the photoelectric conversion layer 30. The lower electrode 27 includes an Al layer 28 and an Mo layer 29 used as a barrier layer for preventing Al, constituting the Al layer 28 prepared on a photoelectric conversion layer 30 side of the Al layer 28, to diffuse into the photoelectric conversion layer 30. COPYRIGHT: (C)2011,JPO&INPIT
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