| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for forming a silicon carbonitride-containing film from a compound as a source material suitable for a PECVD (plasma enhanced chemical vapor deposition) device, and to provide a gas barrier film and a semiconductor device using the obtained film. <P>SOLUTION: A compound expressed by general formula (1) is used as a source material to obtain a silicon carbonitride film by a plasma enhanced chemical vapor deposition method, and the obtained film is used for a gas barrier layer or an insulating film. In the formula, X<SP>1</SP>, X<SP>2</SP>, X<SP>3</SP>, X<SP>4</SP>and X<SP>5</SP>are each a hydrogen atom, a 1-20C hydrocarbon group, or a silicon-containing hydrocarbon group, and may be bonded to each other; however, the formula includes at least one silicon-containing hydrocarbon group; and R is a hydrogen atom or a 1-20C hydrocarbon group, and m and n are each an integer of 0 to 20. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
