发明名称 |
Normally off gallium nitride field effect transistors (FET) |
摘要 |
A heterostructure field effect transistor (HFET) gallium nitride (GaN) semiconductor power device comprises a hetero-junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer. The power device further comprises a source electrode and a drain electrode disposed on two opposite sides of a gate electrode disposed on top of the hetero-junction structure for controlling a current flow between the source and drain electrodes in the 2DEG layer. The power device further includes a floating gate located between the gate electrode and hetero-junction structure, wherein the gate electrode is insulated from the floating gate with an insulation layer and wherein the floating gate is disposed above and padded with a thin insulation layer from the hetero-junction structure and wherein the floating gate is charged for continuously applying a voltage to the 2DEG layer to pinch off the current flowing in the 2DEG layer between the source and drain electrodes whereby the HFET semiconductor power device is a normally off device.
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申请公布号 |
US2011103148(A1) |
申请公布日期 |
2011.05.05 |
申请号 |
US20090589945 |
申请日期 |
2009.10.30 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, INC. |
发明人 |
BHALLA ANUP;ZHU TINGGANG |
分类号 |
G11C16/04;H01L21/337;H01L31/00 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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