| 发明名称 |
Semiconductor Device and A Method of Manufacturing the Same |
| 摘要 |
A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable III can be obtained.
|
| 申请公布号 |
US2011101367(A1) |
申请公布日期 |
2011.05.05 |
| 申请号 |
US201113005728 |
申请日期 |
2011.01.13 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD |
发明人 |
KADONO MASAYA;YAMAZAKI SHUNPEI;YAMAUCHI YUKIO;KITAKADO HIDEHITO |
| 分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
