发明名称 |
METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT |
摘要 |
In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence. |
申请公布号 |
US2011104836(A1) |
申请公布日期 |
2011.05.05 |
申请号 |
US20090990243 |
申请日期 |
2009.06.09 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
RODE PATRICK;STRASSBURG MARTIN;ENGL KARL;HOEPPEL LUTZ |
分类号 |
H01L33/00;H01L33/22;H01L33/38 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|