| 摘要 |
<p>Disclosed is a method for manufacturing a chalcopyrite type compound thin film, with which excellent device characteristics are provided. Also disclosed is a method for manufacturing a thin film solar cell using such method. The thin film manufacturing method for forming the chalcopyrite type compound thin film containing elements in the Ib, IIIb and VIb groups on the short periodic table on a substrate (101) has: a step wherein the substrate (101) is disposed in a film-forming chamber (1) such that the distance (D) (mm) between a target (201), which contains the elements in the Ib, IIIb and VIb groups, and the substrate (101) is 30 mm or shorter; and a step wherein the chalcopyrite type compound thin film is formed on the substrate (101) by means of sputtering using the target (201). In the film-forming step, the sputtering is performed under the condition where the gas pressure (P) (Pa) in the film-forming chamber (1) satisfies the relationship of D×P=35 (mm·Pa), while heating the substrate (101) so that the substrate is at the temperature where the chalcopyrite type compound thin film is crystallized.</p> |
