发明名称 |
SUBSTRATE, SUBSTRATE PROVIDED WITH THIN FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>Provided are a substrate which suppresses deterioration of processing accuracy of a semiconductor device due to the warping of the substrate, a substrate provided with a thin film, a semiconductor device formed using the abovementioned substrate, and a method for manufacturing said semiconductor device. In the substrate (1), the diameter of the main surface (1a) is 2 inches or more, the bow value of the main surface (1a) is -40 µm to -5 µm, and the warp value of the main surface (1a) is 5 µm to 40 µm. The value of the surface roughness (Ra) of the main surface (1a) of the substrate (1) is preferably 1 nm or less and the value of the surface roughness (Ra) of the main surface (1b) is preferably 100 nm or less.</p> |
申请公布号 |
WO2010119792(A9) |
申请公布日期 |
2011.05.05 |
申请号 |
WO2010JP56206 |
申请日期 |
2010.04.06 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;HARADA, SHIN;SASAKI, MAKOTO;MASUDA, TAKEYOSHI |
发明人 |
HARADA, SHIN;SASAKI, MAKOTO;MASUDA, TAKEYOSHI |
分类号 |
C30B29/36;C23C16/32;C23C16/42;C30B25/20;H01L21/02;H01L21/205;H01L21/329;H01L21/336;H01L21/337;H01L21/338;H01L29/12;H01L29/47;H01L29/78;H01L29/80;H01L29/808;H01L29/812;H01L29/861;H01L29/872 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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