| 摘要 |
An object is to provide a plasma processing apparatus and a method for controlling a substrate attraction force in a plasma processing apparatus by which the substrate attraction force is controlled to be constant without being influenced by the number of processed substrates. Therefore, change of a substrate potential is previously measured every constant integrated film thickness interval under a predetermined plasma processing condition (S1, S2), each reference attraction voltage at every constant integrated film thickness interval is obtained by adding a potential corresponding to a desired electrostatic attraction force to each of the measured substrate potentials, each set attraction voltage to be applied to a single electrode of an electrostatic chuck for each number of processed substrates is calculated on the basis of each of the obtained reference attraction voltages (S4), at the time of the plasma processing of the substrate under the predetermined plasma processing condition, each of the calculated set attraction voltages is applied to the single electrode for each number of processed substrates, so that the electrostatic attraction force on the substrate is made constant (S5).
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