GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND LAMP

摘要

A Group III nitride semiconductor device of the present invention is obtained by laminating at least a buffer layer (12) made of a Group III nitride compound on a substrate (11), wherein the buffer layer (12) is made of AlN, and a lattice constant of a-axis of the buffer layer (12) is smaller than a lattice constant of a-axis of AlN in a bulk state.