发明名称 |
REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND MASK FOR EUV LITHOGRAPHY |
摘要 |
Provision of an EUV mask whereby an influence of reflected light from a region outside a mask pattern region is suppressed, and an EUV mask blank to be employed for production of such an EUV mask. A reflective mask for EUV lithography (EUVL), comprising a substrate having a mask pattern region and an EUV light-absorbing region located outside the mask pattern region; a reflective layer provided on the mask pattern region of the substrate for reflecting EUV light and having a portion on which an absorber layer is present and a portion on which no absorber layer is present; the portion on which an absorber layer is present and the portion on which no absorber layer is present being arranged so as to constitute a mask pattern; wherein the reflectivity of a surface of the absorber layer for EUV light is from 5 to 15% and the reflectivity of a surface of the EUV light-absorbing region for EUV light is at most 1%.
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申请公布号 |
US2011104595(A1) |
申请公布日期 |
2011.05.05 |
申请号 |
US201113004081 |
申请日期 |
2011.01.11 |
申请人 |
ASAHI GLASS COMPANY, LIMITED |
发明人 |
HAYASHI KAZUYUKI;UNO TOSHIYUKI;EBIHARA KEN |
分类号 |
G03F1/24;G03F7/20 |
主分类号 |
G03F1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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