发明名称 HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL OF PLACEHOLDER MATERIALS IN TRANSISTORS OF DIFFERENT CONDUCTIVITY TYPE
摘要 In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder material. Consequently, the remaining portion of the placeholder material may efficiently protect the underlying sensitive materials, such as a high-k dielectric material, when performing the corner rounding process sequence.
申请公布号 US2011101470(A1) 申请公布日期 2011.05.05
申请号 US20100894746 申请日期 2010.09.30
申请人 HEMPEL KLAUS;BEYER SVEN;LENSKI MARKUS;KRUEGEL STEPHAN 发明人 HEMPEL KLAUS;BEYER SVEN;LENSKI MARKUS;KRUEGEL STEPHAN
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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