发明名称 INCREASING FULL WELL CAPACITY OF A PHOTODIODE USED IN DIGITAL PHOTOGRAPHY
摘要 A CMOS pixel circuit and timing for use in digital photography where the photodiode has increased full well. The circuit includes the photodiode, a reset transistor, a first transfer gate to move a charge from the photodiode to a floating diffusion node, a source follower transistor, a row select transistor, a second transfer gate located between the photodiode and the first transfer, and a capacitor located between the first and second transfer gates.
申请公布号 US2011101420(A1) 申请公布日期 2011.05.05
申请号 US20090610307 申请日期 2009.10.31
申请人 PATEL PRATIK 发明人 PATEL PRATIK
分类号 H01L27/148;H01L21/00 主分类号 H01L27/148
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