发明名称 MAGNETORESISTANCE DEVICE
摘要 A magnetoresistance device comprises a substrate, an elongate semiconductor channel extending in a first direction and at least two conductive leads providing a set of contacts to the channel. The device may comprise an optional semiconductor shunt in contact with the channel. The optional shunt, channel and set of contacts are stacked relative to the substrate in a second direction which is perpendicular to the first direction and the surface of the substrate. The device has a side face running along the channel. The device is responsive to a magnetic field generally perpendicular to the side face.
申请公布号 US2011102947(A1) 申请公布日期 2011.05.05
申请号 US20100915648 申请日期 2010.10.29
申请人 HITACHI, LTD. 发明人 OGAWA SUSUMU;WILLIAMS DAVID;FUKUDA HIROSHI;WASHIO KATSUYOSHI
分类号 G11B5/48;H01L21/02;H01L29/82 主分类号 G11B5/48
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