发明名称 |
METHODS, STRUCTURES AND DEVICES FOR INCREASING MEMORY DENSITY |
摘要 |
Non volatile memory devices comprising a memory string including a plurality of vertically superimposed diodes. Each of the diodes may be arranged at different locations along a length of the electrode and may be spaced apart from adjacent diodes by a dielectric material. The electrode may electrically couple the diodes of the memory strings to one another and to another memory device, such as, a MOSFET device. Methods of forming the non volatile memory devices as well as intermediate structures are also disclosed. |
申请公布号 |
WO2011053731(A2) |
申请公布日期 |
2011.05.05 |
申请号 |
WO2010US54564 |
申请日期 |
2010.10.28 |
申请人 |
MICRON TECHNOLOGY, INC.;TANG, SANH D.;ZAHURAK, JOHN K. |
发明人 |
TANG, SANH D.;ZAHURAK, JOHN K. |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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