发明名称 Spannungsreduzierte Ni-P/Pd-Stapel für Waferoberfläche
摘要 <p>The invention relates to a substrate having a bondable metal coating comprising, in this order, on an Al or Cu surface: (a) a Ni-P layer, (b) a Pd layer and, optionally, (c) an Au layer, wherein the thickness of the Ni-P layer (a) is 0.2 to 10 µm, the thickness of the Pd layer (b) is 0.05 to 1.0 µm and the thickness of the optional Au layer (c) is 0.01 to 0.5 µm, and wherein the Ni-P layer (a) has a P content of 10.5 to 14 wt.-%. The deposit internal stress of the resulting Ni-P/Pd stack is not higher than 34.48 MPa (5,000 psi). Further, a process for the preparation of such a substrate is described.</p>
申请公布号 DE602008005748(D1) 申请公布日期 2011.05.05
申请号 DE20086005748T 申请日期 2008.10.17
申请人 ATOTECH DEUTSCHLAND GMBH 发明人 UHLIG, ALBRECHT;GAIDA, JOSEF;SUCHENTRUNK, CHRISTOF;BOYLE, MIKE;WASHO, BRIAN
分类号 C23C18/36;C23C18/44;H01L21/60;H01L23/485 主分类号 C23C18/36
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