FORMATION METHOD OF FUSE STRUCTURE

摘要

A formation method of a fuse structure, comprising: providing a semiconductor substrate, a fuse structure being formed on the substrate; forming a first dielectric layer on the semiconductor substrate, the first dielectric layer covering the fuse structure and with a target thickness; forming an etching stop layer on the first dielectric layer; forming a second dielectric layer on the etching stop layer; a selectivity etching being applied to the second dielectric layer, forming a via hole above the fuse structure, and the bottom of the via hole exposing the etching stop layer. The present invention effectively controls the thickness of the dielectric layer retained above the fuse structure, and improves the reliability of the device.