发明名称 |
Nonvolatile Memory Devices Having Gate Structures Therein with Improved Blocking Layers |
摘要 |
Nonvolatile memory devices include a tunnel insulating layer on a substrate and a charge storing layer on the tunnel insulating layer. A charge transfer blocking layer is provided on the charge storing layer. The charge transfer blocking layer is formed as a composite of multiple layers, which include a first oxide layer having a thickness of about 1 Å to about 10 Å. This first oxide layer is formed directly on the charge storing layer. The charge transfer blocking layer includes a first dielectric layer on the first oxide layer. The charge transfer blocking layer also includes a second oxide layer on the first dielectric layer and a second dielectric layer on the second oxide layer. The first and second dielectric layers have a higher dielectric constant relative to the first and second oxide layers, respectively. The memory cell includes an electrically conductive electrode on the charge transfer blocking layer.
|
申请公布号 |
US2011101438(A1) |
申请公布日期 |
2011.05.05 |
申请号 |
US20100938006 |
申请日期 |
2010.11.02 |
申请人 |
YOO DONG-CHUL;KIM BYONG-JU;CHOI HAN-MEI;HWANG KI-HYUN |
发明人 |
YOO DONG-CHUL;KIM BYONG-JU;CHOI HAN-MEI;HWANG KI-HYUN |
分类号 |
H01L29/788;H01L29/792 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|