SILICON CARBIDE SUBSTRATE PRODUCTION METHOD AND SILICON CARBIDE SUBSTRATE

摘要

Disclosed is a production method for a silicon carbide substrate (1) involving a process for preparing a plurality of SiC substrates (20) comprising monocrystalline silicon carbide, a process for forming a base layer (10) of silicon carbide that holds the plurality of SiC substrates (20) in a state in which the plurality of SiC substrates (20) are arranged side by side in plan view, and a process for forming filling portions (60) that fill the spaces between said plurality of SiC substrates (20).