| 发明名称 |
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE |
| 摘要 |
A method for manufacturing a silicon carbide substrate (1) includes the steps of: preparing a plurality of SiC substrates (20) each made of single-crystal silicon carbide; forming a base layer (10) made of silicon carbide and holding the plurality of SiC substrates (20), which are arranged side by side when viewed in a planar view; and forming a filling portion (60) filling a gap between the plurality of SiC substrates (20).
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| 申请公布号 |
CA2764900(A1) |
申请公布日期 |
2011.05.05 |
| 申请号 |
CA20102764900 |
申请日期 |
2010.09.27 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HARADA, SHIN;SASAKI, MAKOTO;NISHIGUCHI, TARO;TAMASO, HIDETO;NAMIKAWA, YASUO |
| 分类号 |
H01L21/02;C30B29/36;H01L21/20;H01L21/205;H01L21/336;H01L29/12;H01L29/78 |
主分类号 |
H01L21/02 |
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