Method for polishing semiconductor wafer made of mono-crystalline silicon, involves polishing front and rear sides of semiconductor wafer after removing deposited polycrystalline silicon layer from front and rear sides of wafer

摘要

The method involves polishing a front side and a rear side of a semiconductor wafer. A polycrystalline silicon layer is deposited on the front side and the rear side of the semiconductor wafer. The deposited polycrystalline silicon layer is removed from the wafer. The front and rear sides of the wafer are again polished, where material of not less than 0.1 microns per side and not longer than 3 microns is removed from the semiconductor wafer during polishing.