| 摘要 |
A method of manufacturing a semiconductor element including a semiconductor substrate, a conductive post portion provided on the semiconductor substrate to protrude therefrom, and a solder layer provided on the conductive post portion, includes forming on the semiconductor substrate the conductive post portion having a distal end surface curved in a substantially arc shape by electrolytic plating, forming an intermediate solder layer on the distal end surface of the conductive post portion, and reflowing the intermediate solder layer to form the solder layer which has a thickest portion at a top of the distal end surface of the conductive post portion.
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