发明名称 |
ETCHING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
The present invention discloses technique of etching selectively a layer containing siloxane. The present invention provides a semiconductor device with reduced operation deterioration due to etching failure. A method for manufacturing a semiconductor device comprises steps of forming a conductive layer electrically connecting to a transistor, an insulating layer covering the conductive layer, and a mask formed over the insulating layer; and etching the insulating layer with a processing gas including a hydrogen bromide gas.
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申请公布号 |
US2011104892(A1) |
申请公布日期 |
2011.05.05 |
申请号 |
US201113004234 |
申请日期 |
2011.01.11 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SASAGAWA SHINYA;MONOE SHIGEHARU |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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