Bipolar semiconductor constituent e.g. semiconductor diode has electric current path that is arranged extending only through n dope zone in semiconductor main portion from one metal covering to another metal covering

摘要

The constituent (100) has surfaces (15,16) that are arranged in parallel with respect to semiconductor main portion (20). The metal coverings (8,9) is arranged on the surfaces respectively. An electric current path is arranged extending only through n dope zone in the semiconductor main portion from the metal covering (8) to the metal covering (9). Independent claims are included for the following: (1) method of manufacturing semiconductor diode; and (2) semiconductor diode.