发明名称 |
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
摘要 |
A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.
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申请公布号 |
US2011104902(A1) |
申请公布日期 |
2011.05.05 |
申请号 |
US20100913441 |
申请日期 |
2010.10.27 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
YAMAZAWA YOHEI;KOSHIMIZU CHISHIO;DENPOH KAZUKI;YAMAWAKU JUN;SAITO MASASHI |
分类号 |
H01L21/3065;C23C14/34;C23C16/505;H01L21/30 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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