A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, is disclosed. In the transistor, a dopant profile at a side of the drain facing the channel is modified so as to provide a region (330) of reduced doping compared to a body region (335) of the drain. The region (330) of reduced doping and the body region (335) can be defined by the same mask (300) and doping step, but the mask (300) is shaped to provide a lesser amount and thus less depth of doping for the region (330) of reduced doping.
