| 摘要 |
Disclosed herein is a semiconductor device including a semiconductor substrate, a wiring layer formed above the semiconductor substrate, a through-hole electrode extending from the bottom surface of the semiconductor substrate to the wiring layer, a bottom surface wiring provided at the bottom surface of the semiconductor substrate such that the bottom surface wiring is connected to the through-hole electrode, and an external terminal connected to the bottom surface wiring. The bottom surface wiring has a greater film thickness than a film thickness of the through-hole electrode at least a portion of the bottom surface wiring including a connection part between the bottom surface wiring and the external terminal. |
