发明名称 |
VERFAHREN ZUR HERSTELLUNG VON HALBLEITERBAUELEMENTEN |
摘要 |
<p>In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a selected distance from the first electrode. After the insulator is formed, a second electrode is formed electrically coupled with the semiconductor material adjoining the insulator.</p> |
申请公布号 |
DE602005027105(D1) |
申请公布日期 |
2011.05.05 |
申请号 |
DE20056027105T |
申请日期 |
2005.09.27 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT CO. L.P. |
发明人 |
HERMAN, GREGORY S;HOFFMAN, RANDY;MARDILOVICH, PETER |
分类号 |
H01L29/786;H01L21/336;H01L29/417;H01L29/739 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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