发明名称 VERFAHREN ZUR HERSTELLUNG VON HALBLEITERBAUELEMENTEN
摘要 <p>In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a selected distance from the first electrode. After the insulator is formed, a second electrode is formed electrically coupled with the semiconductor material adjoining the insulator.</p>
申请公布号 DE602005027105(D1) 申请公布日期 2011.05.05
申请号 DE20056027105T 申请日期 2005.09.27
申请人 HEWLETT-PACKARD DEVELOPMENT CO. L.P. 发明人 HERMAN, GREGORY S;HOFFMAN, RANDY;MARDILOVICH, PETER
分类号 H01L29/786;H01L21/336;H01L29/417;H01L29/739 主分类号 H01L29/786
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