<p>A sputter deposition system adapted for depositing a thin film onto a substrate surface is provided. The system includes a cathode assembly having at least two cathode targets opposing the substrate surface and adapted for providing cathode material for forming the thin film. A plasma source is adapted for generating a plasma for sputtering cathode material off the at least two cathode targets. A magnetic field generator is adapted for providing a magnetic field which is controllable independently of the plasma source such that such that a difference between high deposition rate portions and low deposition rate portions is compensated by the action of the magnetic field on charged particle movements.</p>
申请公布号
WO2011051294(A1)
申请公布日期
2011.05.05
申请号
WO2010EP66185
申请日期
2010.10.26
申请人
APPLIED MATERIALS, INC.;LOPP, ANDREAS;BENDER, MARCUS