发明名称 SPUTTER DEPOSITION SYSTEM AND METHOD
摘要 <p>A sputter deposition system adapted for depositing a thin film onto a substrate surface is provided. The system includes a cathode assembly having at least two cathode targets opposing the substrate surface and adapted for providing cathode material for forming the thin film. A plasma source is adapted for generating a plasma for sputtering cathode material off the at least two cathode targets. A magnetic field generator is adapted for providing a magnetic field which is controllable independently of the plasma source such that such that a difference between high deposition rate portions and low deposition rate portions is compensated by the action of the magnetic field on charged particle movements.</p>
申请公布号 WO2011051294(A1) 申请公布日期 2011.05.05
申请号 WO2010EP66185 申请日期 2010.10.26
申请人 APPLIED MATERIALS, INC.;LOPP, ANDREAS;BENDER, MARCUS 发明人 LOPP, ANDREAS;BENDER, MARCUS
分类号 H01J37/34;C23C14/35 主分类号 H01J37/34
代理机构 代理人
主权项
地址