WIRING LAYER, SEMICONDUCTOR DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE USING SEMICONDUCTOR DEVICE

摘要

Disclosed is a electrode film that does not delaminate from an oxide thin film and wherein copper atoms do not diffuse into the oxide thin film. A wiring layer is configured from a high-density barrier film (37) that is a Cu-Mg-Al thin film, and a copper film (38). The high-density barrier film (37) is put into contact with the oxide thin film. Considering the total number of atoms of copper, magnesium, and aluminum in the high-density barrier film (37) to be 100 at%, when magnesium is contained in the range of between 0.5 and 5 at%, inclusive, and aluminum is contained in the range of between 5 and 15 at%, inclusive, adhesiveness and barrier properties are both achieved, and wiring layers (50a, 50b) are obtained with strong adhesion and wherein copper atoms do not diffuse.