发明名称 |
MOS Devices with Partial Stressor Channel |
摘要 |
A semiconductor structure includes a semiconductor substrate having a first lattice constant; a gate dielectric on the semiconductor substrate; a gate electrode on the semiconductor substrate; and a stressor having at least a portion in the semiconductor substrate and adjacent the gate electrode. The stressor has a tilted sidewall on a side adjacent the gate electrode. The stressor includes a first stressor layer having a second lattice constant substantially different from the first lattice constant; and a second stressor layer on the first stressor layer, wherein the second stressor has a third lattice constant substantially different from the first and the second lattice constants.
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申请公布号 |
US2011101305(A1) |
申请公布日期 |
2011.05.05 |
申请号 |
US20110985507 |
申请日期 |
2011.01.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU MING-HUA;LIANG MONG-SONG;LEE TZE-LIANG;LI JR-HUNG |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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