发明名称 Mikroelektronischer Baustein, der Siliziumpatches für Zwischenverbindungen hoher Dichte enthält, und Verfahren zum Herstellen desselben
摘要 A microelectronic package comprises a substrate (110), a silicon patch (120) embedded in the substrate, a first interconnect structure (131) at a first location of the silicon patch and a second interconnect structure (132) at a second location of the silicon patch, and an electrically conductive line (150) in the silicon patch connecting the first interconnect structure and the second interconnect structure to each other.
申请公布号 DE112009000351(T5) 申请公布日期 2011.05.05
申请号 DE20091100351T 申请日期 2009.03.29
申请人 INTEL CORPORATION 发明人 MAHAJAN, RAVI;SANE, SANDEEP
分类号 H01L23/48 主分类号 H01L23/48
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