发明名称 |
Mikroelektronischer Baustein, der Siliziumpatches für Zwischenverbindungen hoher Dichte enthält, und Verfahren zum Herstellen desselben |
摘要 |
A microelectronic package comprises a substrate (110), a silicon patch (120) embedded in the substrate, a first interconnect structure (131) at a first location of the silicon patch and a second interconnect structure (132) at a second location of the silicon patch, and an electrically conductive line (150) in the silicon patch connecting the first interconnect structure and the second interconnect structure to each other. |
申请公布号 |
DE112009000351(T5) |
申请公布日期 |
2011.05.05 |
申请号 |
DE20091100351T |
申请日期 |
2009.03.29 |
申请人 |
INTEL CORPORATION |
发明人 |
MAHAJAN, RAVI;SANE, SANDEEP |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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