| 摘要 |
<p>The occurrence of internal stress is reduced during the solar cell production process, thereby reducing crystal defects and recombination loss. Provided is a method for producing solar cells having a p-n junction, which involves a step for forming a p-type layer on a semiconductor substrate by coating a diffusion coating solution containing impurities which function as acceptors, and by diffusing the impurities by means of thermal diffusion and/or a step for forming an n-type layer on a semiconductor substrate by coating a diffusion coating solution containing impurities which function as donors, and by diffusing the impurities by means of thermal diffusion.</p> |
