发明名称 APPARATUS AND METHOD FOR PLASMA ION IMPLANTATION OF ARGENTUM ELEMENT TO IMPROVE ANTI-MICROBIAL PROPERTY
摘要 PURPOSE: A device and method for silver element plasma ion injection capable of the improvement of anti-microbial property are provided to generate high density silver plasma by applying very high electricity at the moment when the pulse is applied. CONSTITUTION: A device for silver element plasma ion injection comprises a vacuum chamber(110), a magnetron deposition(120), a sample mount(130), a first power source feeding member and a second power source feeding member. The vacuum chamber keeps the inside under vacuum condition. The magnetron deposition performs thin film deposition. The sample mount is installed in the location facing the deposition within the vacuum chamber and mount a simple. The first power source feeding member applies the pulse direct current electricity in the deposition. The second power source feeding member accelerates the plasma ions of the elemental silver towards sample.
申请公布号 KR20110046055(A) 申请公布日期 2011.05.04
申请号 KR20090102872 申请日期 2009.10.28
申请人 发明人
分类号 C23C14/48;C23C14/35 主分类号 C23C14/48
代理机构 代理人
主权项
地址