发明名称 Method for processing cavity of core substrate
摘要 PURPOSE: A method for processing cavity of a core substrate is provided to implement accurately the shape of a cavity by forming first and second processing areas. CONSTITUTION: In a method for processing cavity of a core substrate, a first processing area(A1) is formed in one side of a core substrate(10). The first processing area is divided with a circuit pattern(12a). A second processing area(A2) is formed in the other side of the core substrate. The second processing area is divided with a circuit pattern(12b). The first processing area is completely removed. The cavity is processed. The second processing area is wider than that of the first processing area.
申请公布号 KR20110045799(A) 申请公布日期 2011.05.04
申请号 KR20090102504 申请日期 2009.10.27
申请人 发明人
分类号 H05K3/00 主分类号 H05K3/00
代理机构 代理人
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