发明名称 |
Light-emitting device, method for making the same, and nitride semiconductor substrate |
摘要 |
The present invention relates to a light-emitting device including: a GaN substrate 1; an n-type nitride semiconductor substrate layer (n-type Al x Ga 1-x N layer 3) disposed on a first main surface side of the GaN substrate 1; a p-type nitride semiconductor substrate layer (p-type Al x Ga 1-x N layer 5) disposed further away from the GaN substrate 1 compared to the n-type nitride semiconductor substrate layer; and a light-emitting layer (multi-quantum well (MQW) 4) positioned between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The p-type nitride semiconductor layer side is down-mounted. Also, light is released from a second main surface 1a, which the main surface opposite from the first main surface of the GaN substrate 1. A groove 80 is formed on the second main surface of the GaN substrate 1. The inner perimeter surface of the groove 80 includes a section (curved surface section) on which surface treatment is performed to smooth the inner perimeter surface. |
申请公布号 |
EP1717870(A3) |
申请公布日期 |
2011.05.04 |
申请号 |
EP20050027358 |
申请日期 |
2005.12.14 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAGAI, YOUICHI;KATAYAMA, KOJI;KITABAYASHI, HIROYUKI |
分类号 |
H01L33/06;H01L33/20;H01L33/10;H01L33/32;H01L33/36;H01L33/54;H01L33/56;H01L33/60;H01L33/62 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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