Sensor for biological or chemical materials and array of said sensor

摘要

The biological or chemical material detector (20) comprises a metal oxide semiconductor transistor of which a silicon channel region (30) is inserted between an upper and a lower insulated gate. The upper gate is isolated from the channel by an insulator of the upper gate, and the lower gate is isolated from the channel by an insulator of the lower gate. The isolated upper gate comprises a detection layer to generate a charge at an interface of the upper isolated gate, where a thickness of the upper gate insulator is 2-3 nm and a thickness of the lower gate insulator is 15-25 nm. The biological or chemical material detector (20) comprises a metal oxide semiconductor transistor of which a silicon channel region (30) is inserted between an upper and a lower insulated gate. The upper gate is isolated from the channel by an insulator of the upper gate, and the lower gate is isolated from the channel by an insulator of the lower gate. The isolated upper gate comprises a detection layer to generate a charge at an interface of the upper isolated gate, where a thickness of the upper gate insulator is 2-3 nm and a thickness of the lower gate insulator is 15-25 nm. A ratio between the thickness of the lower and upper gate insulators is 8-10. A thickness of the channel is 2-20 nm. The isolated lower gate is electrically connected to an electrode contact laid on the front face. The lower gate is constituted of a strongly doped casing that is connected to the electrode contact by a well.