| 摘要 |
PURPOSE: A method for correcting patterns for a semiconductor device is provided to minimize the correction time of a pattern, thereby increasing a correction throughput. CONSTITUTION: A shadowing element(185) is formed in a transparent substrate(100) of a photo mask based on a first shadowing map. A first shadowing area(182La) includes the shadowing element. The first shadowing map includes a plurality of first unit zones. The size of the first shadowing area is the same as the size of the first unit zones of the first shadowing area. The shadowing element in the second shadowing area has the same properties as the shadowing element of the first shadowing area. |
