发明名称 Procédé pour réaliser des structures métalliques sur des surfaces de corps semiconducteurs
摘要 1,157,475. Etching. SIEMENS A.G. 10 Feb., 1967 [11 Feb., 1966], No. 6453/67. Heading B6J. A layer of aluminium, containing a minor amount of at least one further metal which will produce local action with aluminium and, e.g. gold or silver, is deposited on a carrier surface, e.g. a surface of a semi-conductor monocrystal such as of silicon, the layer is covered with an etch-resistant photosensitive varnish, the varnish is exposed and developed to uncover portions of the metal layer not required to form part of a desired pattern and the exposed metal is etched away, e.g. with an alkaline etching solution such as potassium carbonate. The metal layer may be deposited by vapour deposition from a strip of aluminium having an electrolytic coating of the further metal(s).
申请公布号 FR1511238(A) 申请公布日期 1968.01.26
申请号 FR19670094542 申请日期 1967.02.10
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人
分类号 C23C14/04;C23F1/00;H01L21/60;H01L23/485;H01L23/532 主分类号 C23C14/04
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