发明名称 POSITIVE TYPE RESIST COMPOSITION WITH THE SUPERIOR DEFECT REDUCTION EFFECT AND THE SUPERIOR LITHOGRAPHY PROPERTY, A METHOD FOR FORMING A RESIST PATTERN, AND A POLYMER COMPOUND
摘要 PURPOSE: A positive type resist composition, a method for forming a resist pattern, and a polymer compound are provided to suppress the generation of defects and improve the critical dimension uniformity of the resist pattern. CONSTITUTION: A positive type resist composition includes a base component and an acid generating component. The solubility of the base component is increased with respect to alkaline developing liquid by the action of acid. The acid generating component generates acid by an exposing operation. The base component includes a polymer in which a0 unit of a chemical formula a0-1 and a1 unit derived from acrylic acidester.
申请公布号 KR20110046326(A) 申请公布日期 2011.05.04
申请号 KR20100104514 申请日期 2010.10.26
申请人 发明人
分类号 G03F7/039;H01L21/027 主分类号 G03F7/039
代理机构 代理人
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