| 摘要 |
PURPOSE: A method for manufacturing a semiconductor light emitting device is provided to pre-heat a light emitting device to eliminate a growth substrate, thereby preventing warpage, damage, or crack due to laser irradiation. CONSTITUTION: A first conductive semiconductor layer(120), an active layer(130), and a second conductive semiconductor layer(140) are formed on a growth substrate(110). A support substrate(150) is formed on the second conductive semiconductor layer. A semiconductor laminate on which the support substrate is formed is pre-heated. The growth substrate is eliminated from the semiconductor laminate by irradiating laser. The semiconductor laminate is processed by heat.
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