发明名称 |
DRY ETCHING APPARATUS AND DRY ETCHING METHOD |
摘要 |
A dry etching apparatus having excellent in-plane uniformity and a high etching rate and a dry etching method are provided. A dry etching apparatus includes a vacuum chamber having an upper plasma generation chamber and a lower substrate processing chamber; a magnetic field coil disposed outside a sidewall of the plasma generation chamber; an antenna coil disposed between the magnetic field coil and the outside of the sidewall and connected to a high-frequency power source; and means for introducing an etching gas disposed on top of the plasma generation chamber, wherein the sidewall is formed of a material having a relative dielectric constant of 4 or more. |
申请公布号 |
EP2148361(A4) |
申请公布日期 |
2011.05.04 |
申请号 |
EP20080752426 |
申请日期 |
2008.05.08 |
申请人 |
ULVAC, INC. |
发明人 |
MORIKAWA, YASUHIRO;SUU, KOUKOU;HAYASHI, TOSHIO |
分类号 |
H01L21/3065;C23C4/10 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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