METHOD OF MEASURING NITROGEN CONTENT, METHOD OF FORMING SILICON OXYNITRIDE FILM AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE,申请号KR20087028017-传众专利搜索

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发明名称	METHOD OF MEASURING NITROGEN CONTENT, METHOD OF FORMING SILICON OXYNITRIDE FILM AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
摘要
申请公布号	KR101032518(B1)	申请公布日期	2011.05.04
申请号	KR20087028017	申请日期	2007.05.17
申请人		发明人
分类号	H01L21/66;H01L21/31;H01L21/318;H01L21/336;H01L29/78;H01L29/786	主分类号	H01L21/66
代理机构		代理人
主权项
地址

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