| 摘要 |
<p>PURPOSE: A one-time programmable nonvolatile memory array and a method for operating and manufacturing the same are provided to perform a reading operation using a PN junction or a Schottky junction, thereby highly integrating a memory array by an existing lithographically process. CONSTITUTION: Bit lines(BL1, BL2) are formed on a semiconductor substrate(12a) by a first semiconductor material. One or more word lines(WL1, WL2, WL3) are formed by a conductive material. A second semiconductor material(16a) is interposed between the bit lines and word lines to form a PN junction with the bit lines. An insulating film(44) is formed between the second semiconductor material and the word lines. The semiconductor substrate and the second semiconductor material are P-type semiconductors.</p> |
