Integrated semiconductor substrate structure and method of manufacturing an integrated semiconductor substrate structure

摘要

The integrated semiconductor substrate structure comprises a substrate (1), a GaN-heterostructure (20) and a semiconductor substrate layer (30). The GaN heterostructure (20) is present in a first device area (51) for definition of GaN-based devices, which heterostructure (20) is covered at least partially with a protection layer (8). The semiconductor substrate layer (30) is present in a second device area (52) for definition of CMOS devices. At least one of the GaN heterostructure (20) and the semiconductor substrate layer (30) is provided in at least one trench (14) in the substrate (1), so that the GaN heterostructure (20) and the semiconductor substrate layer (30) are laterally juxtaposed.