Interlayer between titanium nitride and high density plasma oxide

摘要

A method for reducing die loss in a semiconductor fabrication process which employs titanium nitride and HDP oxide is provided. In the fabrication of multilevel interconnect structures, there is a propensity for defect formation in a process in which titanium nitride and HDP oxide layers are in contact along the edge of a semiconductor substrate. A dielectric interlayer (310) is provided which improves the interfacial properties between titanium nitride (360) and HDP oxide (320) and thereby reduces defects caused by delamination at the titanium nitride/HDP oxide interface.