| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to reduce defects on the outermost edge area of a semiconductor substrate, thereby shortening a product developing period. CONSTITUTION: An insulating film whose thickness is thinner than 300Åis formed on a layer(404) to be etched. A first photosensitive film is deposited on a semiconductor substrate exposed by the insulating film. A second photosensitive film is deposited on the layer to be etched and an insulating film pattern. A light exposure process is performed using a mask which defines a micro pattern on the second photosensitive film. A second photosensitive pattern(410A) defining a micro pattern is formed on the inner side of the insulating film pattern.</p> |
